FDC2612 查看數據表（PDF） - Fairchild Semiconductor
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FDC2612 Datasheet PDF : 5 Pages
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Typical Characteristics
15
ID = 1.1A
12
VDS = 50V
100V
150V
9
6
3
0
0
2
4
6
8
10
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
RDS(ON) LIMIT
1
0.1
100µs
1ms
10ms
100ms
1s
DC
0.01
VGS = 10V
SINGLE PULSE
RθJA = 156oC/W
TA = 25oC
0.001
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
1000
Figure 9. Maximum Safe Operating Area.
350
300
CISS
250
f = 1MHz
VGS = 0 V
200
150
100
COSS
50
CRSS
0
0
25
50
75
100
125
150
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
RθJA = 156°C/W
30
TA = 25°C
20
10
0
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.1
0.01
0.0001
0.2
0.1
0.05
0.02
0.01
0.001
RθJA(t) = r(t) + RθJA
RθJA = 156°C/W
SINGLE PULSE
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1000
FDC2612 Rev B3(W)
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