BAV99 查看數據表（PDF） - ON Semiconductor
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BAV99 Datasheet PDF : 6 Pages
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Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VRRM
Maximum Repetitive Reverse Voltage
70
V
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-Repetitive Peak Pulse Width = 1.0 Second
Forward Surge Current Pulse Width = 300 Microseconds
1.0
8.0
A
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to +150
°C
-55 to +150
°C
Note:
1. These ratings are based on a maximum junction temperature of 150°C.
These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
PD
RθJA
Power Dissipation
Thermal Resistance, Junction to Ambient
350
mW
357
°C/W
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
VR
Breakdown Voltage, per Diode
VF
Forward Voltage, per Diode
IR
Reverse Leakage, per Diode
CT
Total Capacitance, per Diode
trr
Reverse-Recovery Time,
per Diode
Conditions
IR = 100 μA
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 70 V
VR = 25 V, TA = 150°C
VR = 70 V, TA = 150°C
VR = 0 V, f = 1.0 MHz
IF = IR = 10 mA,
IRR = 1 mA,
RL = 100 Ω
Min.
70
Max.
715
855
1.00
1.25
2.5
30.0
50.0
1.5
6.0
Unit
V
mV
V
μA
pF
ns
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