FDS3570 查看數據表（PDF） - Fairchild Semiconductor

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FDS3570

80V N-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

December 2000

FDS3570

80V N-Channel PowerTrench MOSFET

General Description

This N-Channel Logic Level MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

These MOSFETs feature faster switching and lower gate

charge than other MOSFETs with comparable RDS(on)

specifications resulting in DC/DC power supply designs

with higher overall efficiency.

Features

• 9 A, 80 V. RDS(ON) = 0.020 Ω @ VGS = 10 V

RDS(ON) = 0.023 Ω @ VGS = 6 V.

• Fast switching speed.

• High performance trench technology for extremely

low RDS(ON).

• High power and current handling capability.

D

D

D

D

SO-8

G

SS

S

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol

Parameter

VDSS

VGSS

ID

PD

TJ, Tstg

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

(Note 1a)

- Pulsed

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS3570

FDS3570

13’’

5

6

7

8

Ratings

80

±20

9

50

2.5

1.2

1

-55 to +150

50

25

Tape Width

12mm

4

3

2

1

Units

V

V

A

W

°C

°C/W

°C/W

Quantity

2500 units

2000 Fairchild Semiconductor International

FDS3570 Rev. C

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