FDS3570 查看數據表（PDF） - Fairchild Semiconductor
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FDS3570 Datasheet PDF : 5 Pages
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Typical Characteristics
50
VGS = 10V
5.0V
6 0V
40
4.5V
30
4.0V
20
10
3.5V
0
0
1
2
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
1.8
ID = 9A
VGS = 10V
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
with Temperature.
60
VDS = 5V
50
40
30
20
125oC
10
25o
TA = -55oC
0
2
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
1.8
1.6
VGS = 4.0V
1.4
4.5V
1.2
5.0V
6.0V
7.0V
1
10V
0.8
0
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.06
0.05
0.04
0.03
0.02
0.01
0
0
ID = 4.5A
TA = 125oC
TA = 25oC
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VGS = 0V
10
TA = 125oC
1
0.1
0.01
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current
and Temperature.
FDS3570 Rev. C
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