IRF520(2002) 查看數據表（PDF） - STMicroelectronics
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产品描述 (功能)
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IRF520
(Rev.:2002)
(Rev.:2002)
STMicroelectronics
IRF520 Datasheet PDF : 8 Pages
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IRF520
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.5
Rthj-amb Thermal Resistance Junction-ambient
Max
62.5
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
60
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 100°C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±100
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 7 A
Min.
2
Typ.
3
0.115
Max.
4
0.27
Unit
V
Ω
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V
ID = 7 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
20
460
70
30
Max.
Unit
S
pF
pF
pF
2/8
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