IRF520 查看數據表（PDF） - STMicroelectronics

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IRF520

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STMicroelectronics 

IRF520

IRF520FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTORS

TYPE

IRF520

IRF520FI

VDSS

100 V

100 V

R DS( on)

< 0.27 Ω

< 0.27 Ω

ID

10 A

7A

s TYPICAL RDS(on) = 0.23 Ω

s AVALANCHE RUGGED TECHNOLOGY

s 100% AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100oC

s LOW GATE CHARGE

s HIGH CURRENT CAPABILITY

s 175oC OPERATING TEMPERATURE

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SOLENOID AND RELAY DRIVERS

s REGULATORS

s DC-DC & DC-AC CONVERTERS

s MOTOR CONTROL, AUDIO AMPLIFIERS

s AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

3

2

1

3

2

1

TO-220

ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VD S Drain-source Voltage (VGS = 0)

VDG R Drain- gate Voltage (RGS = 20 kΩ)

VGS Gate-source Voltage

ID

Drain Current (cont.) at Tc = 25 oC

ID

Drain Current (cont.) at Tc = 100 oC

IDM(•) Drain Current (pulsed)

Ptot Total Dissipation at Tc = 25 oC

Derating Factor

VISO Insulation Withstand Voltage (DC)

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

June 1993

Value

I RF 52 0

I RF 520FI

100

100

± 20

10

7

7

5

40

40

70

35

0. 47

0. 23



2000

-65 to 175

175

Unit

V

V

V

A

A

A

W

W/oC

V

oC

oC

1/9

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