IRF520FI 查看數據表（PDF） - Inchange Semiconductor
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IRF520FI Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES
·Typical RDS(on) =0.23Ω
·Avalanche Rugged Technology
·High Current Capability
·Low Gate Charge
·175℃ Operating Temperature
isc Product Specification
IRF520FI
·DESCRITION
·High Current ,High Speed Switching
·DC-DC&DC-AC Converters
·Motor Control ,Audio Amplifiers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
100
V
±20
V
ID
Drain Current-Continuous
7
A
IDM
Drain Current-Single Plused
40
A
PD
Total Dissipation @TC=25℃
35
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
4.29
62.5
℃/W
℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
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