BC337-25 查看數據表（PDF） - STMicroelectronics
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BC337-25 Datasheet PDF : 5 Pages
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BC337-25 / BC337-40
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
Rthj-case • Thermal Resistance Junction-Case
Max
Max
200
83.3
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 20 V
VCB = 20 V
TC = 150 oC
IEBO
V(BR)CBO
V(BR)CEO∗
V(BR)EBO
VCE(sat)∗
Emitter Cut-off Current
(IC = 0)
Collector-Base
Breakdown Voltage
(IE = 0)
Collector-Emitter
Breakdown Voltage
(IB = 0)
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 10 µA
IC = 10 mA
IE = 10 µA
IC = 500 mA
IB = 50 mA
VBE(on)∗ Base-Emitter On
Voltage
IC = 500 mA
VCE = 1 V
hFE∗ DC Current Gain
IC = 100 mA
for BC337-25
for BC337-40
VCE = 1 V
fT
Transition Frequency IC = 10 mA VCE = 5 V f = 100MHz
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
f = 1 MHz
Min. Typ.
50
45
5
160
250
100
5
Max.
100
5
100
0.7
1.2
400
600
Unit
nA
µA
nA
V
V
V
V
V
MHz
pF
2/5
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