M48Z128(2003) 查看數據表（PDF） - STMicroelectronics
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M48Z128 Datasheet PDF : 21 Pages
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M48Z128, M48Z128Y, M48Z128V*
MAXIMUM RATING
Stressing the device above the rating listed in the
“Absolute Maximum Ratings” table may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice reliability. Refer also to the
STMicroelectronics SURE Program and other rel-
evant quality documents.
Table 3. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature
0 to 70
°C
TSTG
Storage Temperature (VCC Off, Oscillator Off)
–40 to 85
°C
TBIAS
Temperature Under Bias
–10 to 70
°C
TSLD(1,2) Lead Solder Temperature for 10 seconds
260
°C
VIO
Input or Output Voltages
–0.3 to 7
V
VCC
Supply Voltage
M48Z128/Y
–0.3 to 7.0
V
M48Z128V
–0.3 to 4.6
V
IO
Output Current
20
mA
PD
Power Dissipation
1
W
Note: 1. For DIP package: Soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to exceed 150°C for longer
than 30 seconds).
2. For SO package: Reflow at peak temperature of 215°C to 225°C for < 60 seconds (total thermal budget not to exceed 180°C for
between 90 to 120 seconds).
CAUTION: Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.
CAUTION: Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.
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