M48Z128(2003) 查看數據表（PDF） - STMicroelectronics
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M48Z128 Datasheet PDF : 21 Pages
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M48Z128, M48Z128Y, M48Z128V*
Table 6. DC Characteristics
Sym
Parameter
M48Z128/Y
M48Z128V
Test Condition(1) –70 / –85 / –120
–85 / –120
Unit
Min
Max
Min
Max
ILI
Input Leakage Current
0V ≤ VIN ≤ VCC
±1
ILO(2) Output Leakage Current
0V ≤ VOUT ≤ VCC
±1
ICC Supply Current
E = VIL
Outputs open
105
±1
µA
±1
µA
50
mA
ICC1 Supply Current (Standby) TTL
E = VIH
7
4
mA
ICC2 Supply Current (Standby) CMOS
VIL Input Low Voltage
VIH Input High Voltage
E = VCC – 0.2V
4
3
mA
–0.3
0.8
–0.3
0.6
V
2.2 VCC + 0.3 2.2 VCC + 0.3 V
VOL Output Low Voltage
IOL = 2.1mA
0.4
0.4
V
VOH Output High Voltage
IOH = –1mA
2.4
2.2
V
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.75 to 5.5V, 4.5 to 5.5V, or 3.0 to 3.6V (except where noted).
2. Outputs deselected.
OPERATING MODES
The M48Z128/Y/V also has its own Power-fail De-
tect circuit. The control circuitry constantly moni-
tors the single VCC supply for an out of tolerance
condition. When VCC is out of tolerance, the circuit
write protects the SRAM, providing a high degree
of data security in the midst of unpredictable sys-
tem operation brought on by low VCC. As VCC falls
below the switchover voltage (VSO), the control cir-
cuitry connects the battery which maintains data
until valid power returns.
Table 7. Operating Modes
Mode
VCC
E
G
Deselect
WRITE
READ
READ
4.75 to 5.5V
or
4.5 to 5.5V
or
3.0 to 3.6V
VIH
X
VIL
X
VIL
VIL
VIL
VIH
Deselect
VSO to VPFD (min)(1)
X
X
Deselect
≤ VSO(1)
X
X
Note: X = VIH or VIL; VSO = Battery Back-up Switchover Voltage.
1. See Table 11, page 14 for details.
W
DQ0-DQ7
X
High Z
VIL
DIN
VIH
DOUT
VIH
High Z
X
High Z
Power
Standby
Active
Active
Active
CMOS Standby
X
High Z Battery Back-up Mode
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