HCF4014B 查看數據表（PDF） - STMicroelectronics
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HCF4014B
STMicroelectronics
HCF4014B Datasheet PDF : 10 Pages
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HCF4014B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
Symbol
Parameter
VDD (V)
Test Condition
Value (*)
Unit
Min. Typ. Max.
CLOCKED OPERATION
tPLH tPHL Propagation Delay Time
5
10
15
tTHL tTLH Transition Time
5
10
160 320
80 160 ns
60 120
100 200
50 100 ns
15
fCL (1)
Maximum Clock Input
Frequency
5
10
40 80
3
6
6 12
MHz
15
tW Clock Pulse Width
5
10
15
8.5 17
180 90
80 40
ns
50 25
tr , tf Clock Input Rise or Fall
5
Time
10
15
tsetup Setup Time, serial Input
5
(ref to CL)
10
15
15 µs
15
120 60
80 40
ns
15
tsetup Setup Time, Parallel Inputs
5
(ref to CL)
10
60 30
80 40
50 25
ns
15
tsetup Setup Time, Parallel/Serial
5
Control (ref to CL)
10
15
40 20
180 90
80 40
ns
60 30
thold Hold Time, serial in,
5
parallel in, parallel /serial
10
control
15
0
0
ns
0
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
(1) If more than one unit is cascaded trCL should be made less than or equal to the sum of the transition time and the fixed propagation delay
of the output of the driving stage of the estimated capacitive load.
5/10
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