MJE18006G 查看數據表（PDF） - ON Semiconductor
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MJE18006G Datasheet PDF : 7 Pages
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100
TJ = 125°C
TJ = 25°C
TJ = - 20°C
10
MJE18006G
TYPICAL STATIC CHARACTERISTICS
VCE = 1 V
100
TJ = 125°C
TJ = 25°C
TJ = - 20°C
10
VCE = 5 V
1
0.01
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
1
0.01
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain @ 5 Volts
2
10
TJ = 25°C
1.5
1
IC = 1 A
2A 3A
5A
6A
1
0.5
0
0.01
0.1
1
IB, BASE CURRENT (AMPS)
IC/IB = 10
0.1
IC/IB = 5
0.01
10
0.01
0.1
TJ = 25°C
TJ = 125°C
1
10
IC COLLECTOR CURRENT (AMPS)
Figure 3. Collector Saturation Region
Figure 4. Collector−Emitter Saturation Voltage
1.3
1.2
1.1
1
0.9
0.8
0.7 TJ = 25°C
0.6
0.5 TJ = 125°C
0.4
0.01
0.1
IC/IB = 5
IC/IB = 10
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Base−Emitter Saturation Region
10000
1000
100
10
1
1
TJ = 25°C
f = 1 MHz
Cib
Cob
10
100
1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
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