MJE18006G 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
MJE18006G Datasheet PDF : 7 Pages
| |||
MJE18006G
180
160
IC = 3 A
140
120
100
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
350
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
IC = 1.3 A
300
250
200
150
IC = 1.3 A
IC = 3 A
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
80
TJ = 25°C
TJ = 125°C
60
3 4 5 6 7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
100
TJ = 25°C
TJ = 125°C
50
3 4 5 6 7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 14. Inductive Crossover Time
100
DC (MJE18006)
5 ms 1 ms
10
1
0.1
GUARANTEED SAFE OPERATING AREA INFORMATION
1,0
10 ms 1 ms
0,8
SECOND BREAKDOWN
DERATING
EXTENDED
0,6
SOA
0,4
THERMAL DERATING
0,2
0.01
10
100
1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
0,0
20
40
60
80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 17. Forward Bias Power Derating
7
TC ≤ 125°C
6
IC/IB ≥ 4
LC = 500 mH
5
4
3
2
1
- 5 V
0
VBE(off) = 0 V
-1, 5 V
0
200
400
600
800
1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 16. Reverse Bias Switching Safe Operating Area
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 15 is
based on TC = 25°C; TJ(pk) is variable depending on power
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when TC ≥ 25°C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown in
Figure 15 may be found at any case temperature by using the
appropriate curve on Figure 17. TJ(pk) may be calculated
from the data in Figure 20. At any case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown. For inductive loads, high voltage and current
must be sustained simultaneously during turn−off with the
base−to−emitter junction reverse−biased. The safe level is
specified as a reverse−biased safe operating area (Figure 16).
This rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode.
http://onsemi.com
5
Share Link: 