MJE5740 查看數據表（PDF） - New Jersey Semiconductor
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MJE5740 Datasheet PDF : 2 Pages
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<SEm.L-Condu.ckoi ^Ptoducti, Une.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
USA
Darlington Transistors
The MJE5740, 41, 42 Darlington transistors are designed for high-voltage power
switching in inductive circuits. They are particularly suited for operation in applications
such as:
• Small Engine Ignition
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
MAXIMUM RATINGS
Rating
Symbol MJE5740 MJE5741 MJE5742
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
VCEO(SUS) 300
350
400
VCEV
600
700
800
VEB
8
Collector Current — Continuous
"c
8
— Peak(1)
'CM
16
Base Current — Continuous
IB
2.5
— Peak(1)
'BM
5
Total Power Dissipation
PD
@ TA = 25°C
2
Derate above 25°C
16
Total Power Dissipation
PD
@ TC = 25°C
80
Derate above 25°C
640
Operating and Storage Junction
Temperature Range
Tj, Tstg
-65 to +150
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%.
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
Symbol
RBJC
R6JA
TL
Max
Unit
1.56
"C/W
62.5
"C/W
275
°c
ELECTRICAL CHARACTERISTICS f!"c = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS (2)
Collector-Emitter Sustaining Voltage
(1C = 50 mA, IB = 0)
MJE5740 vCEO(sus)
300
MJE5741
350
MJE5742
400
Collector Cutoff Current (VQEV = Rated Value, VgE(off) = 1 -5 Vdc)
(VCEV = Rated Value, VBE(off) =1 -5 vdc. TC = 1°°°C)
Emitter Cutoff Current (VEB = 8 Vdc, Ic = 0)
SECOND BREAKDOWN
!CEV
—•
'EBO
—
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
IS/b
RBSOA
(2) Pulse Test: Pulse Width = 300 us, Duty Cycle = 2%.
MJE5740
MJE5741*
MJE5742*
'Motorola Preferred Device
POWER DARLINGTON
TRANSISTORS
8 AMPERES
300, 350, 400 VOLTS
80 WATTS
TO-220AB
Typ | Max | Unit
Vdc
—
—
1
mAdc
—
5
—
75
mAdc
See Figure 6
See Figure 7
(continued)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
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