M48T12(1998) 查看數據表（PDF） - STMicroelectronics
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M48T12 Datasheet PDF : 15 Pages
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M48T02, M48T12
Table 5. Capacitance (1)
(TA = 25 °C, f = 1 MHz )
Symbol
Parameter
Test Condition
Min
Max
Unit
CIN
Input Capacitance
VIN = 0V
CIO (2)
Input / Output Capacitance
VOUT = 0V
Notes: 1. Effective capacitance measured with power supply at 5V.
2. Outputs deselected.
10
pF
10
pF
Table 6. DC Characteristics
(TA = 0 to 70°C; VCC = 4.75V to 5.5V or 4.5V to 5.5V)
Symbol
ILI (1)
ILO (1)
Parameter
Input Leakage Current
Output Leakage Current
Test Condition
0V ≤ VIN ≤ VCC
0V ≤ VOUT ≤ VCC
ICC
ICC1 (2)
ICC2 (2)
VIL(3)
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Input Low Voltage
Outputs open
E = VIH
E = VCC – 0.2V
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 2.1mA
VOH
Output High Voltage
IOH = –1mA
Notes: 1. Outputs Deselected.
2. Measured with Control Bits set as follows: R = ’1’; W, ST, KS, FT = ’0’.
Min
Max
Unit
±1
µA
±5
µA
80
mA
3
mA
3
mA
–0.3
0.8
V
2.2
VCC + 0.3
V
0.4
V
2.4
V
Table 7. Power Down/Up Trip Points DC Characteristics (1)
(TA = 0 to 70°C)
Symbol
Parameter
Min
Typ
Max
Unit
VPFD
Power-fail Deselect Voltage (M48T02)
4.5
4.6
4.75
V
VPFD Power-fail Deselect Voltage (M48T12)
4.2
4.3
4.5
V
VSO
Battery Back-up Switchover Voltage
tDR(2)
Expected Data Retention Time
Notes: 1. All voltages referenced to VSS.
2. At 25°C.
3.0
10
V
YEARS
4/15
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