2SC4135 查看數據表（PDF） - SANYO -> Panasonic

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2SC4135

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

2SA1593/2SC4135

Electrical Characteristics at Ta = 25˚C

Parameter

Symbol

Conditions

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

ICBO

IEBO

hFE

fT

Cob

VCB=(–)100V, IE=0

VEB=(–)4V, IC=0

VCE=(–)5V, IC=(–)100mA

VCE=(–)10V, IC=(–)100mA

VCB=(–)10V, f=1MHz

Collector-to-Emitter Saturation Voltage

VCE(sat) IC=(–)1A, IB=(–)100mA

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-ON Time

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

IC=(–)1A, IB=(–)100mA

IC=(–)10µA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)10µA, IC=0

See specified Test Circuit

Storage Time

tstg

See specified Test Circuit

Fall Time

tf

See specified Test Circuit

Switching Time Test Circuit

Ratings

min

typ

100*

120

(25)

16

(–0.22)

0.13

(–)0.85

(–)120

(–)100

(–)6

(80)

80

(750)

1000

(40)

50

max

(–)100

(–)100

400*

(–0.6)

0.4

(–)1.2

Unit

nA

nA

MHz

pF

pF

V

V

V

V

V

V

ns

ns

ns

ns

ns

ns

No.2511-2/4

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