AJT150(RevB) 查看數據表（PDF） - Advanced Semiconductor
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AJT150 Datasheet PDF : 1 Pages
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AJT150
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AJT150 is Designed for
960 – 1215 MHz, JTIDS Applications.
FEATURES:
• Internal Input/Output Matching Network
• PG = 7.5 dB at 150 W/ 1215 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
10 A
VCB
60 V
VCE
35 V
PDISS
140 W
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
0.57 °C/W
PACKAGE STYLE .400 2L FLG (A)
4x .062 x 45°
A
.040 x 45°
2xB
C
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
E
D
G
H
I
J
K
L
M IN IM U M
inches / mm
.135 / 3.43
.100 / 2.54
.050 / 1.27
.376 / 9.55
.110 / 2.79
.395 / 10.03
.490 / 12.45
.690 / 17.53
.890 / 22.61
.003 / 0.08
.052 / 1.32
.118 / 3.00
.193 / 4.90
.100 / 2.54
F
2xR
NP
M
MAXIMUM
inches / mm
.145 / 3.68
.120 / 3.05
.396 / 10.06
.130 / 3.30
.407 / 10.34
.510 / 12.95
.710 / 18.03
.910 / 23.11
.006 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
ORDER CODE: ASI10548
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCER
IC = 50 mA
RBE = 10 Ω
BVEBO
IE = 10 mA
ICES
VBE = 50 V
hFE
VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
60
4.0
5.0
10
100
UNITS
V
V
V
mA
---
PG
ηC
VCc = 50 V POUT = 150 W f = 960 - 1215 MHz
7.5
40
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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