2SK3766 查看數據表（PDF） - Toshiba
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2SK3766 Datasheet PDF : 6 Pages
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2SK3766
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Gate-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
⎪Yfs⎪
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 450 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 1 A
VDS = 10 V, ID = 1 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
⎯
⎯
±10
μA
±30 ⎯
⎯
V
⎯
⎯
100
μA
450 ⎯
⎯
V
3.5
⎯
4.5
V
⎯
1.9 2.45
Ω
0.18 0.65 ⎯
S
⎯ 270 ⎯
⎯
4
⎯
pF
⎯
45
⎯
tr
10 V
VGS
0V
ton
ID = 1 A
⎯
20
⎯
VOUT
⎯
30
⎯
RL = 200 Ω
ns
tf
⎯
18
⎯
VDD ∼− 200 V
toff
Duty <= 1%, tw = 10 μs
⎯
60
⎯
Qg
Qgs
VDD ∼− 360 V, VGS = 10 V, ID = 2 A
Qgd
⎯
8
⎯
⎯
4
⎯
nC
⎯
4
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 2 A, VGS = 0 V
IDR = 2 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
2
A
⎯
⎯
5
A
⎯
⎯
−1.5
V
⎯ 1000 ⎯
ns
⎯
5.0
⎯
μC
Marking
K3766
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-06
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