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零件编号
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2SK3766 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
2SK3766
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI)
Toshiba
2SK3766 Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
10
COMMON SOURCE
VGS
=
10 V
PULSE TEST
8
6
1.0
ID
=
2 A
4
0.5
2
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
2SK3766
I
DR
– V
DS
10
COMMON SOURCE
Tc = 25℃
PULSE TEST
1
0.1
10
5
0.01
0.0
3
1
V
GS
=0,-1V
-0.2
-0.4
-0.6
-0.8
-1.0
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
CAPACITANCE – V
DS
1000
Ciss
100
Coss
10
COMMON SOURCE
Crss
V
GS
= 0V
f = 1MHz
Tc = 25℃
1
0.1
1
10
100
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
V
th
– Tc
6
COMMON SOURCE
V
DS
= 10V
5
I
D
= 1mA
PULSE TEST
4
3
2
1
0
-80
-40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P
D
– Tc
50
40
30
20
10
0
0
40
80
120
160
200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
500
20
400
300
200
100
0
0
V
DS
16
90
200
12
V
DD
=400V
8
V
GS
COMMON SOURCE
I
D
= 2.0A
Tc = 25℃
PULSE TEST
4
2
4
6
8
10
TOTAL GATE CHARGE Q
g
(nC)
0
12
4
2006-11-06
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