MTP4N4S 查看數據表（PDF） - New Jersey Semiconductor
零件编号
产品描述 (功能)
生产厂家
MTP4N4S Datasheet PDF : 3 Pages
| |||
IRF430-433/IRF830-833
Electrical Characteristics (Tc = 25°C unless otherwise noted)
Symbol
Characteristic
Off Characteristics
V(BR)DSS Drain Source Breakdown Voltage1
IRF430/432/830/832
IRR31/433/831/833
bss
Zero Gate Voltage Drain Current
Win
500
450
Max
250
1000
less
Gate-Body Leakage Current
IRF430-433
IRF830-833
On Characteristics
Vosph) Gate Threshold Voltage
2.0
RDS(on) Static Drain-Source On-Resistanoe2
IRF430/431/830/831
IRF432/433/832/833
ais
Forward Transconductance
2.S
Dynamic Characteristics
ciss
Input Capacitance
GOSS
Output Capacitance
GISS
Reverse Transfer Capacitance
Switching Characteristics (TC = 25'1C, Figures 12. 13)
td(on)
Turn-On Delay Time
tr
Rise Time
td(oH)
t|
°g
Turn-Off Delay Time
Fall Time
Total Gate Charge
±100
±500
4.0
1.5
2.0
800
200
60
30
30
55
30
30
Symbol
Characteristic
Source-Drain Diode Characteristics
VSD
Diode Forward Voltage
IRF430/431/830/831
IRF432/433/832/833
t,,
Reverse Recovery Time
Notes
1- Tj=+a5°C to +1EO-C
2. Pulso last Pulse width < 60 (is. Duty cycle < 1 %
Typ
Max
1.4
1,3
600
Unit
Test Conditions
V
VGS - 0 V, b = 250 /uA
UA
Vps = Rated VDSs, VGS = 0 V
M
VDS = 0.8 x Rated VDSS,
VQS-O V, TC=125°C
nA
VGS - ±20 V. VDS = 0 V
V
b = 250 |uA, VDS = VGS
n
VQS =10 V, ID = 2.5 A
S ftj) VDS = 10 V, ID = 2.5 A
PF
VDS = 25 V, VQS - 0 V
f - 1.0 MHz
pF
PF
ns
VQD = 225 V, ID - 2.5 A
ns
VGS= 10 V, RGEN = 15 H
RGs = 15 fl
ns
ns
nC
VGS- 10 V, ID = 7.0 A
VDS = 180 v
Unit
Test Conditions
V
ls = 4.5 A; VGS - 0 V
V
ls = 4.0 A; VGS - 0 V
ns
ls = 4.5 A; dls/dt=- 100 A/jjS
Share Link: 