IRF430 查看數據表（PDF） - New Jersey Semiconductor
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IRF430 Datasheet PDF : 3 Pages
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MTM/MTP4N45/4N50
Electrical Characteristics (Tc = 25°C unless otherwise noted)
Symbol
Characteristic
Off Characteristics
V(BR)DSS Drain Source Breakdown Voltage1
MTM/MTP4N50
MTM/MTP4N45
loss
Zero Gate Voltage Drain Current
Mln
500
450
IGSS
Gate-Body Leakage Current
On Characteristics
Vas(ih) Gate Threshold Voltage
2.0
1.5
RDS(on)
VDS(on)
Static Drain-Source On-Resistance2
Drain-Source On-Voltage2
9ls
Forward Transconductance
2.0
Dynamic Characteristics
Q83
Input Capacitance
coss
Output Capacitance
Qss
Reverse Transfer Capacitance
Switching Characteristics (Tc = 25°C, Figures 12, 13)3
tdton)
t,
Turn-On Delay Time
Rise Time
td(oll)
tf
Turn-Off Delay Time
Fall Time
Q9
Total Gate Charge
Motes
1. Tj-+25'C to +150-C
2. Pulse lest Pulse width < SO ps, Duly cycle <1%
3. Switching time measurements performed on LEM TR-58 test equipment.
Max
0.25
2.5
±500
4.5
4.0
1.5
3.0
7,0
6.0
1200
300
80
50
100
200
100
60
Unit
Test Conditions
V
VGS - 0 V, b - 5-0 mA
mA
Vos = 0.85 x Rated VDSS,
VGS - 0 V
mA
VDs - 0.85 x Rated VQSS.
VQS^O V. TC=100°C
nA
VGS = ± 20 V, VDS = 0 V
V
V
n
V
V
V
S (U)
ID "1.0 mA, VDS = VGS
ID =1.0 mA, VDS = VGS,
TC = 100°C
Ves = 10 V, I0 = 2.0 A
VQS -10 V, ID = 2,0 V
VQs-10 V, ID = 4.0 A
VGS =10 V, ID -4.0 A
TC-100«C
VDS =10 V, ID = 2.0 A
pF
VDS = 25 V, VGS = 0 V
f=1.0 MHz
PF
PF
ns
VDD = 25 V, ID = 2.0 A
ns
VGS =10 V, RGEN-SO «
RGS = 50 S7
ns
ns
nC
VGS -10 V, ID = 7.0 A
VDD =180 V
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