FCX1149A 查看數據表（PDF） - KEXIN Industrial
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FCX1149A Datasheet PDF : 2 Pages
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SMD Type
Transistors
PNP Silicon Power Switching Transistor
FCX1149A
Features
2W power dissipation.
20A peak pulse current.
Excellent HFE characteristics up to 10 Amps.
Extremely low saturation voltage E.g. 45mv Typ.
Extremely low equivalent on-resistance.
RCE(sat) 67mÙ at 3A.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Symbol
Rating
Unit
VCBO
-30
V
VCEO
-25
V
VEBO
-5
V
ICM
-10
A
IC
-3
A
Base current
Power dissipation
Operating and storage temperature range
IB
-500
mA
Ptot
1
W
Tj,Tstg
-55 to +150
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