TIP35C 查看數據表（PDF） - Bourns, Inc

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TIP35C

NPN SILICON POWER TRANSISTORS

Bourns, Inc 

TIP35, TIP35A, TIP35B, TIP35C

NPN SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS

1000

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

TCS635AA

VCE = 4 V

TC = 25°C

tp = 300 µs, duty cycle < 2%

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

10

TCS635AB

100

1·0

10

0·1

IC = 25 A

1

0·1

OBSOLETE 1·0

10

IC - Collector Current - A

Figure 1.

IC = 300 mA

IC = 1 A

IC = 3 A

0·01

100

0·001

0·01

0·1

1·0

IB - Base Current - A

Figure 2.

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

TCS635AC

2·0

VCE = 4 V

TC = 25°C

IC = 20 A

IC = 15 A

IC = 10 A

10

100

1·8

1·6

1·4

1·2

1·0

0·8

0·6

0·1

1·0

10

100

IC - Collector Current - A

Figure 3.

PRODUCT INFORMATION

JULY 1968 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

3

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