ADG1408BRU 查看數據表（PDF） - Analog Devices
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ADG1408BRU Datasheet PDF : 16 Pages
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Preliminary Technical Data
ADG1408/ADG1409
ADG1408/ADG1409—SPECIFICATIONS
DUAL SUPPLY1
Table 1. VDD = +15 V ± 10%, VSS = –15 V ± 10%, GND = 0 V, unless otherwise noted.
Parameter
−40ºC to
−40ºC to
+25ºC +85ºC
+125ºC
Unit
ANALOG SWITCH
Analog Signal Range
VSS to VDD
V
RON
3
Ω typ
4
5
5
Ω max
RON Flatness
Ω typ
0.5
Ω max
∆RON
0.5
Ω typ
Ω max
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
±0.01
nA typ
Drain OFF Leakage ID (OFF)
ADG1408
ADG1409
Channel ON Leakage ID, IS (ON)
ADG1408
ADG1409
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS2
tTRANSITION
±0.5 ±2.5
±1
±100
±1
±50
±1
±100
±1
±50
2.0
0.8
±0.005
±0.5
5
80
120
±50
±100
±50
±100
±50
2.0
0.8
±0.5
120
nA max
nA max
nA max
nA max
nA max
V min
V max
µA max
µA max
pF typ
ns typ
250
250
ns max
TBBM
tON(EN)
tOFF(EN)
10
10
10
1
85
125
125
150 225
225
40
65
65
150
150
ns typ
ns min
ns typ
ns max
ns typ
ns max
Charge Injection
20
20
pC typ
OFF Isolation
75
dB typ
Channel-to-Channel Crosstalk
85
dB typ
Total Harmonic Distortion, THD +
N
-3dB Bandwidth
0.002
50
% typ
MHz
typ
CS (OFF)
15
CD (OFF)
pF typ
Test Conditions/Comments
VD = ±10 V, IS = −10 mA
VD = +10 V, −10 V
VD = +10 V, −10 V
VD = ±10 V, VS = −10 V;
Test Circuit 2
±0.5
VD = ±10 V; VS = ±10 V;
Test Circuit 3
VS = VD = ±10 V;
Test Circuit 4
VIN= VINL or VINH
RL = 300 Ω, CL = 35 pF;
VS1 = ±10 V, VS8 = ±10 V;
Test Circuit 5
RL = 300 Ω, CL = 35 pF;
VS = 10 V; Test Circuit 6
RL = 300 Ω CL = 35 pF;
VS = 5 V; Test Circuit 7
RL = 300 Ω, CL = 35 pF;
VS = 5 V; Test Circuit 7
VS = 0 V, RS = 0 Ω, CL = 10 nF; Test Circuit
8
RL = 1 kΩ, f = 100 kHz;
VEN = 0 V; Test Circuit 9
RL = 1 kΩ, f = 100 kHz;
Test Circuit 10
RL = 600 Ω, 5Vrms; f=20Hz to 20kHz
RL = 300 Ω, CL = 5 pF; Test Circuit 10
Test Circuit 10
f = 1 MHz
f = 1 MHz
Rev. B | Page 3 of 16
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