2A3 查看數據表（PDF） - GHz Technology

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2A3

0.3 Watts, 20 Volts, Class A Linear to 2000 MHz

GHz Technology 

2A3/2A3A

0.3 Watts, 20 Volts, Class A

Linear to 2000 MHz

GENERAL DESCRIPTION

The 2A3 is a COMMON EMITTER transistor capable of providing up to

0.3 Watt of Class A, RF output power to 2000 MHz. This transistor is

specifically designed for general Class A amplifier applications. It utilizes

gold metalization and diffused ballasting to provide high reliability and

supreme ruggedness.

CASE OUTLINE

2A3 - 55ET, STYLE 2

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25oC

3.5 Watts

Maximum Voltage and Current

BVces

Collector to Emitter Voltage

BVebo

Emitter to Base Voltage

Ic

Collector Current

50 Volts

3.5 Volts

300 mAmps

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 150oC

+ 200oC

2A3A - 55EU, STYLE 2

ELECTRICAL CHARACTERISTICS @ 25 OC

SYMBOL CHARACTERISTICS

TEST CONDITIONS MIN TYP MAX UNITS

Pout

Pin

Pg

Ft

VSWR

Power Out (<1.0 db gain comp) F = 2000 MHz

0.3

Power Input

Ic = 140 mA

Power Gain

Vcc = 20 Volts

7.7

Transition Frequency

Vce = 20 V, Ic = 140 mA 3.4

Load Mismatch Tolerance

0.4

Watts

0.05 Watts

8.5

dB

3.7

GHz

30:1

BVebo Emitter to Base Breakdown

Ie = 1 mA

3.5

Volts

BVces

Collector to Emitter Breakdown Ic = 25 mA

45

Volts

BVceo

Collector to Emitter Breakdown Ic = 25 mA

22

Volts

hFE

DC Current Gain

Cob

Capacitance

Vce = 5 V, Ic = 100 mA 20

Vcb = 28V, f = 1 MHz

2.0

3.0

pF

θjc

Thermal Resistance

45

50

oC/W

Issue August 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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