CHA5056 查看數據表（PDF） - United Monolithic Semiconductors
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CHA5056 Datasheet PDF : 8 Pages
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CHA5056
17-27GHz High Power Amplifier
Electrical Characteristics
Tamb. = 25°C; Vd = 4,5V and Id = 890mA, CW biasing mode. These values are representative of
on wafer measurements.
Symbol
Parameter
Min
Typ
Max
Unit
Fop Operating frequency range
17
27
GHz
G
Small signal gain
21
dB
P1dB
S11
Pulsed output power at 1dB compression (1)
Input return loss
29
dBm
2.0:1
S22 Ouput return loss
2.2:1
OIP3 Output IP3
39
dBm
Vd 1,2,3 DC Drain Voltage
4.5
V
Vg 1-2,3 DC Gate Voltage
-1.7
V
Id
Small Signal Bias current (2)
890
mA
Id1dB Bias current at 1dB compression
940
mA
(1) These values are representative for pulsed on-wafer measurements that are made without bonding wires
at the RF ports.
(2) This parameter is fixed by gate voltage Vg.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum Drain bias voltage
+5
V
Id
Maximum Small Signal Bias current
1100
mA
Vg
Gate bias voltage
-4 to +0.8
V
Pin
Maximum input power overdrive
+13.0
dBm
Tch
Maximum channel temperature
+175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref: DSCHA50567211 - 30 Jul 07
2/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
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