BFT92W 查看數據表（PDF） - NXP Semiconductors.
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BFT92W Datasheet PDF : 14 Pages
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NXP Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT92W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to Ts = 93 C; note 1
MIN.
65
MAX.
20
15
2
25
300
+150
150
UNIT
V
V
V
mA
mW
C
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point up to Ts = 93 C; note 1
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
VALUE
190
UNIT
K/W
CHARACTERISTICS
Tj = 25 C (unless otherwise specified).
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
fT
transition frequency
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
GUM
maximum unilateral power gain;
note 1
F
noise figure
CONDITIONS
IE = 0; VCB = 10 V
IC = 15 mA; VCE = 10 V
IC = 15 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 C
IE = ie = 0; VCB = 10 V;
f = 1 MHz
IC = ic = 0; VEB = 0.5 V;
f = 1 MHz
IC = 0; VCB = 10 V;
f = 1 MHz
IC = 15 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 C
IC = 15 mA; VCE = 10 V;
f = 1 GHz; Tamb = 25 C
s = opt; IC = 5 mA;
VCE = 10 V; f = 500 MHz
s = opt; IC = 5 mA;
VCE = 10 V; f = 1 GHz
MIN.
20
TYP.
50
4
MAX.
50
UNIT
nA
GHz
0.65
pF
0.75
pF
0.5
pF
17
dB
11
dB
2.5
dB
3
dB
Note
1.
GUM is the maximum unilateral power gain, assuming s12 is zero.
GUM
=
10
log
-----------------------s----2--1----2-----------------------
1 – s11 21 – s22 2
dB.
May 1994
3
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