2SC5227 查看數據表（PDF） - Inchange Semiconductor
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2SC5227 Datasheet PDF : 5 Pages
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5227
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
hFE
DC Current Gain
IC= 20mA ; VCE= 5V
︱S21e︱2 Insertion Power Gain
IC= 20mA ; VCE= 5V; f= 1GHz
︱S21e︱2 Insertion Power Gain
IC= 3mA ; VCE= 2V; f= 1GHz
fT
Current-Gain—Bandwidth Product IC= 20mA ; VCE= 5V
COB
Output Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
Cre
Feedback Capacitance
NF
Noise Figure
IE= 0 ; VCB= 10V;f= 1.0MHz
IC= 7mA ; VCE= 5V;f= 1GHz
MIN TYP. MAX UNIT
1
μA
10 μA
60
270
9
12
dB
8
5
7
dB
GHz
0.75 1.2 pF
0.5
pF
1.0 1.8 dB
hFE Classification
3
4
60-120
90-180
5
135-270
isc website：www.iscsemi.cn
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