Philips Semiconductors
Quadruple ESD transient voltage suppressor
Product specification
BZA456A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point one or more diodes loaded
VALUE UNIT
125
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per diode
VZ
VF
VZSM
IR
rdif
SZ
working voltage
forward voltage
non-repetitive peak reverse voltage
reverse current
differential resistance
temperature coefficient of working
voltage
IZ = 1 mA
IF = 200 mA
IZSM = 3 A; tp = 1 ms
VR = 3 V
IZ = 250 µA
IZ = 1 mA
IZ = 5 mA
Cd
diode capacitance
see Fig.5
VR = 0; f = 1 MHz
VR = 3 V; f = 1 MHz
MIN. TYP. MAX. UNIT
5.32 5.6
−
−
−
−
−
−
−
−
−
−
−
1.2
5.88
1.3
8
2
1600
400
−
V
V
V
µA
Ω
Ω
mV/K
−
−
240 pF
−
−
140 pF
1999 May 25
3