ESDALC6V1W5 查看數據表（PDF） - STMicroelectronics
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ESDALC6V1W5 Datasheet PDF : 7 Pages
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ESDALC6V1W5
1 Characteristics
Figure 1. Peak power dissipation versus
initial junction temperature
Ppp[Tj initial] / Ppp [Tj initial = 25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Tj(°C)
0.0
0
25
50
75
100
125
150
175
Figure 2. Peak pulse power versus
exponential pulse duration
(Tj initial = 25°C)
Ppp(W)
100
Tj initial = 25°C
10
1
tp(µs)
10
100
Figure 3.
Clamping voltage versus peak pulse Figure 4.
current (Tj initial = 25°C, rectangular
waveform, tp = 2.5 µs)
Capacitance versus reverse applied
voltage (typical values)
Ipp(A)
100.0
10.0
1.0
0.1
0
Vcl(V)
tp=2.5µs
Tj initial =25°C
10
20
30
40
50
60
C(pF)
14
13
12
F=1MHz
Vosc =30mVRMS
Tj=25°C
11
10
9
8
7
6
5
4
3
2
1
VR(V)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 5. Relative variation of leakage current Figure 6. Peak forward voltage drop versus
versus junction temperature
peak forward current (typical
(typical values)
values)
IR [Tj] / IR [Tj=25°C]
100
IFM (A)
1.E+00
1.E-01
10
1.E-02
Tj(°C)
1
1.E-03
VFM(V)
25
50
75
100
125
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
3/7
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