C67078-S5014-A3 查看數據表（PDF） - Siemens AG
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C67078-S5014-A3 Datasheet PDF : 9 Pages
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Drain-source on-state resistance
RDS(on) = f (Tj)
Parameter: ID = 5 A, VGS = 10 V
BTS 112A
Gate threshold voltage VGS(th) = f (Tj)
Parameter: VDS = VGS, ID = 1 mA
Typ. transfer characteristic
ID = f (VGS)
Parameter: tp = 80 µs, VDS = 25 V
Typ. transconductance gfs = f (ID)
Parameter: tp = 80 µs, VDS = 25 V
Semiconductor Group
6
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