BTS112 查看數據表（PDF） - Siemens AG

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BTS112

TEMPFET®

Siemens AG 

Continuous drain current ID = f (TC)

Parameter: VGS ≥ – 10 V

BTS 112A

Forward characteristics of reverse diode

IF = f (VSD)

Parameter: Tj, tp = 80 µs

Typ. gate-source leakage current

IGSS = f (TC)

Parameter: VGS = – 20 V, VDS = 0

Typ. capacitances C = f (VDS)

Parameter: VGS = 0, f = 1 MHz

Semiconductor Group

7

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