BC817-40 查看數據表（PDF） - STMicroelectronics

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BC817-40

SMALL SIGNAL NPN TRANSISTORS

STMicroelectronics 

BC817-25 / BC817-40

THERMAL DATA

Rthj-amb • Thermal Resistance Junction-Ambient

• Device mounted on a PCB area of 1 cm2

Max

500

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 20 V

VCB = 20 V

TC = 150oC

100 nA

5

µA

IEBO

Emitter Cut-off Current VEB = 5 V

(IE = 0)

100 nA

V(BR)CEO∗ Collector-Emitter

Breakdown Voltage

IC = 10 mA

45

V

(IB = 0)

VCE(sat)∗ Collector-Emitter

IC = 500 mA

IB = 50 mA

0.7

V

Saturation Voltage

VBE(on)∗ Base-Emitter On

) Voltage

IC = 500 mA

VCE = 1 V

1.2

V

t(s hFE∗ DC Current Gain

IC = 100 mA

VCE = 1 V

c for BC817-25

160

400

u for BC817-40

250

600

d fT

Transition Frequency IC = 10 mA VCE = 5 V f =100 MHz

100

MHz

Pro CCBO

Collector-Base

Capacitance

IE = 0

VCB = 10 V

Obsolete Product(s) - Obsolete ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

f = 1 MHz

8

pF

2/4

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