ZUMTS17H-T4H 查看數據表（PDF） - Zetex => Diodes
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ZUMTS17H-T4H Datasheet PDF : 2 Pages
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SOT323 NPN SILICON PLANAR
RF TRANSISTORS
ISSUE 1 – DECEMBER 1998
PARTMARKING DETAIL — ZUMTS17 - T4
ZUMTS17H - T4H
ZUMTS17
ZUMTS17H
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
VALUE
25
15
2.5
50
25
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
UNIT CONDITIONS.
Collector Cut-Off
Current
ICBO
Static Forward Current hFE
Transfer Ratio
ZUMTS17H
Transition
fT
Frequency
10
nA VCB=10V, IE=0
10
µA VCB=10V, IE=0,
Tamb = 100°C
25
150
IC=2.0mA, VCE=1.0V
20
125
IC=25mA, VCE=1.0V
70
200
IC=2.0mA, VCE=1.0V
1.0
GHz IC=2.0mA, VCE=5.0V
f=500MHz
1.3
GHz IC=25mA, VCE=5.0V
f=500MHz
Feedback Capacitance -Cre
Collector Capacitance CTc
0.85
1.5
pF
IC=2.0mA, VCE=5V, f=1MHz
pF
IE=Ie=0, VCB=10V,
f=1MHz
Emitter Capacitance
CTe
2.0
pF
IC=Ic=0, VEB=5.0V,
f=1MHz
Noise Figure
N
Intermodulation
dim
Distortion
4.5
dB
-45
dB
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
IC=2.0mA, VCE=5.0V
RS=50Ω, f=500MHz
IC=10mA, VCE=6.0V
RL=37.5Ω,Tamb=25°C
Vo=100mV at fp=183MHz
Vo=100mV at fq=200MHz
measured at f(2q-p) =217MHz
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