2SA1600 查看數據表（PDF） - Inchange Semiconductor
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2SA1600 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1600
DESCRIPTION
·With ITO-220 package
·Switching power transistor
·Low collector saturation voltage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (ITO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-Peak
IBB
Base current
IBM
Base current-Peak
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction case
VALUE
-60
-40
-7
-12
-24
-2
-3
30
150
-55~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
MAX
4.16
UNIT
℃/W
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