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PA52A 查看數據表(PDF) - Apex Microtechnology

零件编号
产品描述 (功能)
生产厂家
PA52A
Apex
Apex Microtechnology Apex
PA52A Datasheet PDF : 4 Pages
1 2 3 4
PA52 • PA52A
Product Innova tionFrom
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +VS to –VS
BOOST VOLTAGE, +Vb to -Vb
OUTPUT CURRENT, within SOA
POWER DISSIPATION, internal
INPUT VOLTAGE, differential
INPUT VOLTAGE, common mode
TEMPERATURE, pin solder - 10s
TEMPERATURE, junction2
TEMPERATURE, storage
OPERATING TEMPERATURE RANGE, case
200V
230V
80A
400W
±20V
±Vb
300°C
150°C
–65 to +150°C
–55 to +125°C
SPECIFICATIONS
PARAMETER
TEST CONDITIONS1
PA52
PA52A
MIN
TYP MAX MIN
TYP MAX UNITS
INPUT
OFFSET VOLTAGE, initial
OFFSET VOLTAGE, vs. temperature
OFFSET VOLTAGE, vs. supply
BIAS CURRENT, initial
BIAS CURRENT vs. supply
OFFSET CURRENT, initial
INPUT IMPEDANCE, DC
IMPUT CAPACITANCE
COMMON MODE VOLTAGE RANGE
COMMON MODE REJECTION,DC
INPUT NOISE
Full temperature range
Full temperature range
Full temp, range, VCM= ±20V
100KHZ BW, Rs=1KΩ
5
20
10
10
.01
10
10"
13
-VB +12
+VB -14
90
100
10
10
50
30
50
50
2
5
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
mV
µV/°V
µV/V
pA
pA/V
pA
Ω
pF
V
dB
µVrms
GAIN
OPEN LOOP,@ 15Hz
GAIN BANDWIDTH PRODUCT
POWER BANDWIDTH
OUTPUT
VOLTAGE SWING
VOLTAGE SWING, PA52
VOLTAGE SWING, PA52A
CURRENT, peak
SETTLING TIME TO.1%
SLEW RATE
RESISTANCE
POWER SUPPLY
VOLTAGE, ±VBOOST
VOLTAGE, ±VS
CURRENT,quiescent, boost supply
CURRENT, quiescent, total
THERMAL
RESISTANCE,AC,junction to case3
RESISTANCE,DC,junction to case
RESISTANCE, junction to air
TEMPERATURE RANGE, case
Full temperature range
RL=10Ω
RL=4Ω, Vo=180VP-P, Av=-10
Full temperature range
94
102
*
*
3
*
90
*
Io=40A
±VBOOST=±VS±10V, Io=40A
±VBOOST=±VS±10V, Io=50A
3ms 10% Duty Cycle
AV= -10,10V STEP,RL=4Ω
AV=-10
IO=0, NO LOAD, 2MHZ
±VS 9.5 ±VS 8.0
±VS 5.8 ±VS 4.0
80
1
50
2.5
*
*
±VS 5.8 ±VS 5.0
*
*
*
*
Full temperature range
Full temperature range
+14, -12 ±30 ±115
*
*
*
±3
±100
*
*
26
32
*
*
30
36
*
*
Full temperature range, F>60HZ
Full temperature range, F>60HZ
Full temperature range
Meets full range specification
-25
.2
.25
*
*
.25
.31
*
*
12
*
85
*
*
dB
MHz
kHz
V
V
V
A
µs
V/µs
Ω
V
V
mA
mA
°C/W
°C/W
°C/W
°C
NOTES: * The specification of PA52A is identical to the specification for PA52 in applicable column to the left
1. Unless otherwise noted: TC = 25°C, DC input specifications are ± value given. Power supply voltage is typical rating.
±VBOOST = ±VS.
2. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to
achieve high MTTF. For guidance, refer to the heatsink data sheet.
3. Rating applies if the output current alternates between both output transistors at a rate faster than 60 Hz.
CAUTION
The PA52 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850°C to avoid generating toxic fumes.
2
PA52U

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