VNB14N04(2012) 查看數據表（PDF） - STMicroelectronics

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VNB14N04
(Rev.:2012)

"OMNIFET" fully autoprotected Power MOSFET

STMicroelectronics 

Electrical specification

VNB14N04 - VNK14N04FM - VNV14N04

Table 4.

Symbol

Electrical characteristics (continued)

Parameter

Test conditions

Min. Typ. Max. Unit

Igf (2) Fault sink current

Vin = 10 V VDS = 13 V

Vin = 5 V VDS = 13 V

50

mA

20

mA

Eas (2) Single pulse avalanche energy

starting Tj = 25°C V DD = 20 V

0.65

Vin = 10 V Rgen = 1 KΩ L = 10 mH

J

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

2. Parameters guaranteed by design/characterization

Obsolete Product(s) - Obsolete Product(s)

6/17

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