2SD1794 查看數據表（PDF） - Inchange Semiconductor
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2SD1794 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1794
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 200V (Min.)
·High Switching Speed
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
200
V
VCBO
Collector-Base Voltage
200
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continunous
10
A
ICM
Collector Current-Peak
15
A
IBB
Base Current-Continunous
0.5
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
1.0
A
50
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W
isc Website：www.iscsemi.cn
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