2SA1553 查看數據表（PDF） - Inchange Semiconductor

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2SA1553

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA1553

DESCRIPTION

·High Current Capability

·High Power Dissipation

·High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -230V(Min)

·Complement to Type 2SC4029

APPLICATIONS

·Power amplifier applications

·Recommend for 120W high fidelity audio frequency amplifier

output stage applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

-230

V

VCEO

Collector-Emitter Voltage

-230

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-15

A

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-1.5

A

150

W

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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