2SA1553 查看數據表（PDF） - New Jersey Semiconductor
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2SA1553 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SA1553
ELECTRICAL CHARACTERISTICS
Tc=25t; unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYR MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA ; IB= 0
-230
V
VcE(sat) Collector-Emitter Saturation Voltage lc= -8.0A; IB= -0.8A
-3.0
V
VBE(OII) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
lc= -7A ; VCE= -5V
VCB= -230V ; IE= 0
-1.5
V
-5
MA
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
-5
MA
hpE-1
DC Current Gain
lc=-1A;VCE=-5V
55
160
hpE-2
DC Current Gain
lc= -7A ; VCE= -5V
35
COB
Output Capacitance
IE= 0;VCB= -10V;f,est= 1.0MHz
470
PF
fr
Current-Gain — Bandwidth Product
lc=-1A;VCE=-5V
25
MHz
• hpE-1 Classifications
R
O
55-110 80-160
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