2SC4234 查看數據表（PDF） - Inchange Semiconductor
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2SC4234 Datasheet PDF : 4 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4234
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0
800
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
ICBO
Collector Cutoff Current
At rated Voltage
ICEO
Collector Cutoff Current
At rated Voltage
IEBO
Emitter Cutoff Current
At rated Voltage
1.0
V
1.5
V
100 μA
100 μA
100 μA
hFE-1
DC Current Gain
IC= 1.5A ; VCE= 5V
8
hFE-2
DC Current Gain
fT
Current-Gain—Bandwidth Product
Switching times
IC= 1mA ; VCE= 5V
IC= 0.3A ; VCE= 10V
7
8
MHz
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 1.5A , IB1= 0.3A; IB2= -0.6A
RL= 170Ω; VBB2= 4V
0.5 μs
3.5 μs
0.3 μs
isc Website：www.iscsemi.cn
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