DCR1574SY 查看數據表（PDF） - Dynex Semiconductor

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DCR1574SY

Phase Control Thyristor

Dynex Semiconductor 

DCR1574SY

DYNAMIC CHARACTERISTICS

Symbol

Parameter

Conditions

Typ. Max. Units

IRRM/IDRM

dV/dt

Peak reverse and off-state current

At VRRM/VDRM, Tcase = 125oC

Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC.

-

300 mA

-

1000 V/µs

dI/dt Rate of rise of on-state current

VT(TO)

rT

tgd

IL

IH

Threshold voltage

On-state slope resistance

Delay time

Latching current

Holding current

tq

Turn-off time

From 80% V

DRM

Gate source 20V, 10Ω

Repetitive 50Hz -

t

r

<

0.5µs.

To

JEDEC

RS397

Non-repetitive

-

At Tvj = 125oC

-

At Tvj = 125oC

-

VD = 67% VDRM, Gate source 30V, 15Ω

Rise time 0.5µs, Tj = 25oC

-

Tj = 25oC, VD = 5V

-

Tj = 25oC, Rg - k = ∞

-

IT = 400A, tp = 1ms, Tj = 125˚C,

VRM = 50V, dIRR/dt = 40A/µs,

400

VDR = 900V, dVDR/dt = 40V/µs linear

250 A/µs

500 A/µs

0.883 V

0.11 mΩ

2

µs

350 mA

100 mA

-

µs

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

VGT

I

GT

VGD

VFGM

VFGN

V

RGM

IFGM

PGM

PG(AV)

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Conditions

VDRM = 5V, Tcase = 25oC

VDRM = 5V, Tcase = 25oC

At VDRM Tcase = 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

Anode positive with respect to cathode

See figs. 7 and 8, gate characteristics table

Max. Units

3.0

V

300 mA

0.25 V

30

V

0.25 V

5

V

30

A

150 W

10

W

4/10

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