ZTX705 查看數據表（PDF） - Zetex => Diodes

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ZTX705

PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

Zetex => Diodes 

ZTX704

ZTX705

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL

ZTX704

ZTX705 UNIT

MIN. MAX. MIN. MAX.

Static Forward

hFE

Current Transfer

Ratio

3K

3K

3K

3K

3K 30K 3K 30K

2K

2K

Transition

fT

Frequency

160 Typical 160 Typical MHz

Input Capacitance

Output Capacitance

Switching Times

Cibo

Cobo

ton

toff

90 Typical 90 Typical pF

15 Typical 15 Typical pF

0.6 Typical 0.6 Typical µs

0.8 Typical 0.8 Typical µs

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

CONDITIONS.

IC=-10mA, VCE=-5V*

IC=-100mA, VCE=-5V*

IC=-1A, VCE=-5V*

IC=-2A, VCE=-5V*

IC=-100mA, VCE=-10V

f=20MHz

VEB=-0.5V, f=1MHz

VCE=-10V, f=1MHz

IC=-0.5A, VCE=-10V

IB1=IB2=-0.5mA

1.0

R5 = 100KΩ

R5 = 1MΩ

0.8 R5 = ∞

0.6

DC Conditions

0.4

R5 = 22KΩ

0.2

0

1

10

100

VCE - Collector-Emitter Voltage (Volts)

Voltage Derating Graph

The maximum permissible operational temperature can be obtained from this graph using

the following equation

Power(max ) − Power(act)

Tamb (max ) =

0.0057

+25° C

Tamb(max)= Maximum operating ambient temperature

Power(max) = Maximum power dissipation figure, obtained from the above graph for a

given VCE and source resistance (RS)

Power(actual)= Actual power dissipation in users circuit

3-251

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