SGH10N120RUF 查看數據表（PDF） - Fairchild Semiconductor
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SGH10N120RUF Datasheet PDF : 7 Pages
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Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 1mA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 10mA, VCE = VGE
IC = 10A, VGE = 15V
IC = 16A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
Le
Internal Emitter Inductance
VCC = 600 V, IC = 10A,
RG = 25Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 600 V, IC = 10A,
RG = 25Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 600 V, VGE = 15V
@ TC = 100°C
VCE = 600 V, IC = 10A,
VGE = 15V
Measured 5mm from PKG
1200
--
--
--
--
--
V
0.6
--
V/°C
--
1
mA
-- ± 100 nA
3.5
5.5
7.5
V
--
2.3 3.0
V
--
2.8
--
V
--
950
--
pF
--
75
--
pF
--
30
--
pF
--
20
--
ns
--
60
--
ns
--
60 110
ns
--
150 300
ns
--
0.65
--
mJ
--
0.65
--
mJ
--
1.3 1.85 mJ
--
20
--
ns
--
70
--
ns
--
80 150
ns
--
200 400
ns
--
0.75
--
mJ
--
1.00
--
mJ
--
1.75 2.54 mJ
10
--
--
µs
--
50
75
nC
--
6
9
nC
--
25
40
nC
--
14
--
nH
©2002 Fairchild Semiconductor Corporation
SGH10N120RUF Rev. B2
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