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STPS6045CW(1999) 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
STPS6045CW
(Rev.:1999)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS6045CW Datasheet PDF : 5 Pages
1 2 3 4 5
STPS6045CP/CPI/CW
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Rth (c)
Parameter
SOT-93 / TO-247
TOP-3I
SOT-93 / TO-247
TOP-3I
Per diode
Total
Per diode
Total
Coupling
When the diodes 1 and 2 are used simultaneously:
TJ(diode 1) = P(diode1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
VF *
Parameter
Reverse leakage
current
Forward voltage drop
Tests Conditions
Tj = 25°C
VR = VRRM
Tj = 125°C
Tj = 125°C
IF = 30 A
Tj = 25°C
IF = 60 A
Tj = 125°C
IF = 60 A
Pulse test : ** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.48 x IF(AV) + 0.005 IF2(RMS)
Value
0.95
0.55
1.8
1.1
0.15
0.4
Unit
°C/W
Min. Typ. Max. Unit
500 µA
20 80 mA
0.53 0.63 V
0.84
0.68 0.78
Fig. 1: Average forward power dissipation
versus average forward current (per diode).
Fig. 2: Average current versus ambient
temperature (δ=0.5, per diode).
PF(av)(W)
25
δ = 0.05
δ = 0.1 δ = 0.2
δ = 0.5
20
δ=1
15
10
T
5
IF(av) (A)
δ=tp/T
tp
0
0 5 10 15 20 25 30 35 40
IF(av)(A)
35
30
25
20
15
10
T
5
δ=tp/T
0
0
25
tp
50
Rth(j-a)=Rth(j-c)
Rth(j-a)=10°C/W
Tamb(°C)
75 100
TOP-3I
SOT-93
TO-247
125 150 175
2/5

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