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CAT5115 查看數據表(PDF) - ON Semiconductor

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CAT5115
ONSEMI
ON Semiconductor ONSEMI
CAT5115 Datasheet PDF : 12 Pages
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CAT5115
Table 5. DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V to +6 V unless otherwise specified)
Symbol
Parameter
Conditions
Min
Typ
POWER SUPPLY
VCC
Operating Voltage Range
ICC1
Supply Current (Increment)
ISB1 (Note 4) Supply Current (Standby)
VCC = 6 V, f = 1 MHz, IW = 0
VCC = 6 V, f = 250 kHz, IW = 0
CS = VCC 0.3 V
U/D, INC = VCC 0.3 V or GND
2.5
0.01
LOGIC INPUTS
IIH
Input Leakage Current
IIL
Input Leakage Current
VIH1
TTL High Level Input Voltage
VIL1
TTL Low Level Input Voltage
VIH2
CMOS High Level Input Voltage
VIL2
CMOS Low Level Input Voltage
POTENTIOMETER CHARACTERISTICS
VIN = VCC
VIN = 0 V
4.5 V VCC 5.5 V
2.5 V VCC 6 V
2
0
VCC x 0.7
0.3
RPOT
Potentiometer Resistance
10 Device
10
50 Device
50
00 Device
100
Pot. Resistance Tolerance
VRH
Voltage on RH pin
VRL
Voltage on RL pin
Resolution
0
0
3.2
INL
DNL
RWI
Integral Linearity Error
Differential Linearity Error
Wiper Resistance
IW
TCRPOT
TCRATIO
VN
CH/CL/CW
fc
Wiper Current
TC of Pot Resistance
Ratiometric TC
Noise
Potentiometer Capacitances
Frequency Response
IW 2 mA
IW 2 mA
VCC = 5 V, IW = 1 mA
VCC = 2.5 V, IW = 1 mA
(1)
100 kHz / 1 kHz
Passive Attenuator, 10 kW
0.5
0.25
70
150
50
8/24
8/8/25
1.7
3. This parameter is tested initially and after a design or process change that affects the parameter.
4. Latch-up protection is provided for stresses up to 100 mA on address and data pins from 1 V to VCC + 1 V.
5. IW = source or sink.
6. These parameters are periodically sampled and are not 100% tested.
Max
6.0
100
50
1
10
10
VCC
0.8
VCC + 0.3
VCC x 0.2
20
VCC
VCC
1
0.5
200
400
1
300
20
Units
V
mA
mA
mA
mA
mA
V
V
V
V
kW
%
V
V
%
LSB
LSB
W
W
mA
ppm/C
ppm/C
nV/Hz
pF
MHz
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