BUK111-50GL 查看數據表（PDF） - Philips Electronics
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BUK111-50GL Datasheet PDF : 16 Pages
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Philips Semiconductors
Logic level TOPFET
SMD version of BUK112-50GL
Product specification
BUK111-50GL
a
1.5
Normalised RDS(ON) = f(Tj)
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.12. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25˚C = f(Tj); ID = 6 A; VIS ≥ 4.4 V
ID / A
50
BUK111-50GL
40
VPS = 0 V
30
20
VPS = 5 V
10
0
0
1
2
3
4
5
6
7
8
VIS / V
Fig.13. Typical transfer characteristics, Tj = 25˚C.
ID = f(VIS) ; conditions: VDS = 10 V; tp = 250 µs
ID / A
30
25
20
15
10
BUK111-50GL
VIS / V =
7
6
5
4.4
4
5
VPSP MIN.
0
4
5
6
7
8
VPS / V
Fig.14. Typical output current limiting, Tj = 25˚C.
ID = f(VPS); tp = 250 µs; VDS = 10 V; parameter VIS
1 / [td sc / ms]
5
RECIPROCAL TRIP TIME
4
BUK111-50GL
3
intercept = PD(TO)
2
1/slope = EDSC
1
OVERLOAD DISSIPATION
0
0
200
400
600
800
1000
1200
PD / W
Fig.15. Typical reciprocal overload trip time.
1/td sc = f(PD); conditions: VPS = 5 V, Tmb = 25˚C
ESC(TO) / mJ
500
BUK111-50GL
400
300
TYP.
200
100
0
0
50
100
150
200
Tmb / C
Fig.16. Typical overload protection energy.
ESC(TO) = f(Tmb); VDD = 13 V; VPS = 5 V, VIS = 5 V
Tj(TO) / C
210
BUK111-50GL
200
190
TYP.
180
170
160
VPSP MIN.
150
3
Fig.17.
4
5
6
7
8
VPS / V
Typical overtemperature protection threshold.
Tj(TO) = f(VPS); VIS = 5 V; ID ≥ 1 A
September 1996
9
Rev 1.000
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