TCET1100(1999) 查看數據表（PDF） - Vishay Semiconductors
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TCET1100 Datasheet PDF : 11 Pages
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TCET110.(G) up to TCET4100
Vishay Telefunken
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
300
Coupled device
250
200
Phototransistor
150
IR-diode
100
50
10000
1000
VCE=20V
IF=0
100
10
0
0
96 11700
40
80
120
Tamb – Ambient Temperature ( °C )
Figure 6. Total Power Dissipation vs.
Ambient Temperature
1
0
95 11026
25
50
75
100
Tamb – Ambient Temperature ( °C )
Figure 9. Collector Dark Current vs. Ambient Temperature
1000.0
100.0
100
VCE=5V
10
10.0
1
1.0
0.1
0.1
0
96 11862
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )
Figure 7. Forward Current vs. Forward Voltage
2.0
VCE=5V
IF=5mA
1.5
1.0
0.5
0
–25
95 11025
0
25
50
75
Tamb – Ambient Temperature ( °C )
Figure 8. Relative Current Transfer Ratio vs.
Ambient Temperature
Document Number 83503
Rev. A6, 08–Sep–99
0.01
0.1
95 11027
1
10
100
IF – Forward Current ( mA )
Figure 10. Collector Current vs. Forward Current
100
20mA
IF=50mA
10
10mA
5mA
1
2mA
1mA
0.1
0.1
95 10985
1
10
100
VCE – Collector Emitter Voltage ( V )
Figure 11. Collector Current vs. Collector Emitter Voltage
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