2SC2209 查看數據表（PDF） - Inchange Semiconductor
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2SC2209 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2209
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA; IB=B 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 150mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 0.2mA
ICBO
Collector Cutoff Current
VCB= 20V; IE= 0
ICEO
Collector Cutoff Current
VCE= 10V; IB=B 0
ICEO
Collector Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IE= -0.5A; VCB= 5V
COB
Output Capacitance
IE= 0; VCB= 5V, ftest= 1MHz
hFE Classifications
Q
R
80-160 120-220
MIN TYP. MAX UNIT
50
V
40
V
1.0
V
1.5
V
1
μA
100 μA
10 μA
80
220
150
MHz
50
pF
isc Website：www.iscsemi.cn
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