2SC5198 查看數據表（PDF） - Inchange Semiconductor
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2SC5198 Datasheet PDF : 3 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5198
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
140
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB=B 0.7A
VBE(on)
Base-Emitter On Voltage
IC= 5A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 140V ; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
2.0
V
1.5
V
5 μA
5 μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
55
160
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
35
COB
Output Capacitance
IE=0 ; VCB= 10V;ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 5V
170
pF
30
MHz
hFE-1 Classifications
R55
R65
R75
55-65
65-75
75-85
R85
85-95
O95
O105
O115
O125
O135
O145
O155
95-105 105-115 115125 125-135 135-145 145-155 155-160
isc Website：www.iscsemi.cn
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